Planar indium antimonide n-channel IGFET by proton bombardment

摘要

Low leakage n on p diodes have been fabricated using a proton bombardment technique. These diodes typically exhibit less than 1µa of reverse current at 5 volts reverse bias for a 13.6 × 13.6 mil junction area. Breakdown voltages of about 10 volts are obtained for material with a bulk acceptor concentration of1-2 times 10^{14}cm--3.