Cooled planar photodiode based on indium antimonide crystals

摘要

The proposed utility model relates to semiconductor devices that are sensitive to infrared radiation in the range (3-5.5) microns and can be used in the manufacture of discrete, line and matrix radiation detectors based on photodiode crystals from indium antimonide. The problem solved by the proposed utility model is to reduce the weight and dimensions of the cooled PD based on InSb. The indicated technical result is achieved by the fact that in a cooled planar photodiode based on indium antimonide crystals, consisting of a metal base with a glass cylinder attached to it with a sapphire double-walled inlet window, inside of which also a metal cylindrical holder is mounted on which the PSE is mounted, consisting of a ceramic base with a photodiode crystal glued onto it, which is surrounded by a ceramic ring onto which a small filter is glued, with a glued onto it a metal aperture diaphragm, which also screens the cylindrical (side) surface of the filter, and a raster pattern in the form of conductive tracks is applied on a ceramic base.