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The Effect of Pulse-Reverse Plating Time on Blind Micro Via Filling

机译:反向电镀时间对盲孔微孔填充的影响

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Horizontal pulse-reverse plating system was employed for blind micro via (BMV) filling process. The reverse plating time, frequency, and current shape was controlled or modified to observe the influence factors on BMV filling and thickness uniformity. Pulse-reverse plating system can reduce the surface thicknesses and had good ability to filling high aspect hole. During reverse time plating, the etching rate of surface copper was larger than that of via copper and it helped the filling of BMV. It mechanism was due to the effects of geometry and surface absorption of levller. The dimple thickness showed an inverse ratio with reverse time. Reverse time dominated the reverse reaction of Cuo??Cu2++2e-, and had influence on surface uniformity. Ferric ionic also plays an important role in the plating system. It reacts as a reductant which controls the reduction rate of Cu2+ and prevents the formation of void in the BMV. The reverse time was control in the range of 2-8 ms. It can be found that longer reverse time (8 ms) accelerated the via filling, however it also result in a poor quality of copper. Optical microscope, thickness measurement (SMES-4P), electrical polishing, optical profilometer, and Scanning electronic microscope (SEM) were employed to characterize the physical morphology of the plating process.
机译:水平脉冲反镀系统用于盲微通孔(BMV)填充过程。控制或修改反向电镀时间,频率和电流形状以观察BMV填充和厚度均匀性的影响因素。脉冲反向电镀系统可以减小表面厚度并具有良好的填充高宽高孔的能力。在相反的时间电镀期间,表面铜的蚀刻速率大于通过铜的蚀刻速率,并且有助于BMV的填充。 IT机制是由于左恒几何和表面吸收的影响。凹坑厚度与相反的时间显示逆比。相反的时间主要管制Cu O + 2e - 的反应,并对表面均匀性产生影响。铁离子也在电镀系统中起重要作用。它反应作为还原剂,其控制Cu 2 + / sup>的还原速率,并防止在BMV中形成空隙。反向时间在2-8毫秒的范围内。可以发现,更长的相反时间(8毫秒)加速通过填充物,但它也导致铜的质量差。光学显微镜,厚度测量(SME-4P),电抛光,光学轮廓仪和扫描电子显微镜(SEM)用于表征电镀过程的物理形态。

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