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Copper plating method for electrolytic filling of blind bores

机译:盲孔电解填充的镀铜方法

摘要

Copper plating method for electrolytic filling of blind bores (13) in a more compartment layer substrates, comprising the steps offor carrying out a chemical coppering an inner wall of the blind bores (13) and for carrying out a subsequent two-stage electrolytic filling of the blind bores (13), wherein in the case of a first stage of the two-stage electrolytic filling a low current density is used and in the case of the second stage of the two-stage electrolytic filling a higher current density is used,characterized in thatthe first stage of the same current as a deposition with a current density of less than or equal to 1,5 a / dm2 up to a thickness of at least 1 μm is carried out andthe second stage, as a pulse metallization in the case of an average current density of approximately 3 a / dm2 and in the case of a ratio of the cathodic to anodic current i1 / i2 of 1 / 2 to 1 / 5 and a pulse times ratio t1 / t2 of 5 / 1 to 30 / 1 is carried out.
机译:用于在更多隔室层基板中电解填充盲孔(13)的镀铜方法,包括以下步骤:对盲孔(13)的内壁进行化学镀铜,以及随后对盲孔(13)进行两阶段电解填充盲孔(13),其中在两阶段电解填充的第一阶段中,使用低电流密度,而在两阶段电解填充的第二阶段中,使用更高的电流密度,其特征在于,进行与沉积相同的电流的第一阶段,其电流密度小于或等于1.5 a / dm 2 ,厚度至少为1μm,第二阶段在平均电流密度约为3 a / dm 2 的情况下,以及在阴极电流与阳极电流的比率i1 / i2为1/2与1的情况下,作为脉冲金属化阶段,将脉冲倍率t1 / t2设为5/1〜30/1。

著录项

  • 公开/公告号DE10236200B4

    专利类型

  • 公开/公告日2007-02-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2002136200

  • 发明设计人

    申请日2002-08-07

  • 分类号H05K3/42;

  • 国家 DE

  • 入库时间 2022-08-21 20:30:09

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