GaInAs(P)-InP quantum well structures for optoelectronic devicesgrown by MOVPE using DADI as a novel liquid In precursor

摘要

The novel liquid In precursor DADI (dimethylaminopropyldimethylindium) has been used to grow multiquantum well structures whichshow a line splitting, in photoluminescence due to monolayerfluctuations. Moreover, GaInAs-GaInAsP-InP separate confinementmultiquantum well modulator structures have been grown. By measuring thequantum confined Stark effect in electroabsorption experiments, a goodagreement with theory could be obtained. Thus, it was shown that DADIcan be used to grow high-quality heterostructures suitable foroptoelectronic devices