InGaAs-on-Insulator MOSFETs Featuring Scaled Logic Devices and Record RF Performance

摘要

We demonstrate scaled InGaAs-on-insulator FinFETs and planar MOSFETs on Si substrate for low power logic and RF applications. This Si-CMOS compatible technology implements SiN_x source-drain spacers and doped extensions for reduced overlap capacitances. FinFETs with performance for logic applications matching state-of-the-art are demonstrated. Simultaneously, f_t and f_max of 400 and 100 GHz are achieved respectively, the highest reported f_t for a III-V MOSFET on Si. Finally, we explore the use of an extended gate line to reduce gate resistance, offering balanced f_t/f_max of 215/300 GHz, the first report of III-V RF devices on Si matching state of the art Si-CMOS.