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Fine pitch micro-bump forming by printing

机译:通过印刷形成的细间距微凸点

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摘要

We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20??m bump pitch capability was confirmed.
机译:我们已经研究了适用于3DIC凸点成型(正面凸点和背面凸点两者)的印刷技术。凸点材料在TSV工艺环境和3DIC堆叠然后再流焊的过程中需要具备多种功能。我们选择了纳米功能材料最初用于功率半导体连接的目的,结果显示了很好的可能性,证实了20?m的凸点间距能力。

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