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First Lateral Contact Probing of 55-$mu$m Fine Pitch Micro-Bumps

机译:55- $ mu $ m细间距微凸点的首次横向接触探测

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摘要

Probing micro-bumps for pre-bond testing is an essential process to check for a known good die. In recent technologies, micro-bumps such those used in 3-D-IC are too small and dense, which gives the probing a new challenge. Moreover, developers are concerned that the tip ends of the micro-bumps are mechanically damaged during the pre-bond testing, which is detrimental for the post-process IC assembly. Thus, many low damage probing solutions have been developed, but they still inevitably damage the tip end of the micro-bumps when the conventional probing method, vertical contact, is used. In this paper, for the first time, we demonstrate lateral contact probing on 55-$mu ext{m}$pitch micro-bumps without any damage to the tip ends. We successfully realized the testing with monolithically fabricated probes by nickel electroplating with a high aspect ratio photoresist mold. The measured fatigue life of the fabricated probes was at least100 000 cycles. Furthermore, the measured current carrying capacity was more than 180 mA. Proving our concept, the contact test results on the micro-bumps showed no damage to the tip end, and the contact resistance was below 1.13$ {Omega }$. Finally, the10 000 probes achieved a uniform 55-$mu ext{m}$pitch, which ensured the possibility in real testing. [2018-0041]
机译:对微型凸块进行预粘合测试是检查已知良好裸片的重要过程。在最新技术中,诸如3-D-IC中使用的微型凸块太小且太密集,这给探测带来了新的挑战。此外,开发人员担心微凸块的尖端在预键合测试期间受到机械损坏,这对于后处理IC组装是有害的。因此,已经开发了许多低损伤的探测解决方案,但是当使用传统的探测方法垂直接触时,它们仍然不可避免地损坏微凸块的尖端。在本文中,我们首次展示了在55- n $ mu text {m} $ npitch微凸点,不会损坏尖端。我们通过高纵横比光刻胶模具的镍电镀,成功实现了单片式探针的测试。测得的预制探针的疲劳寿命至少为10万次循环。此外,测得的载流容量大于180mA。证明了我们的概念,微型凸点上的接触测试结果未发现尖端损坏,接触电阻低于1.13 n $ { Omega} $ n。最终,这10000个探针实现了统一的55- n $ mu text {m} $ npitch,确保了实际测试的可能性。 [2018-0041]

著录项

  • 来源
    《Microelectromechanical Systems, Journal of》 |2018年第6期|1114-1123|共10页
  • 作者单位

    School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;

    Broadcom Ltd., Seoul, South Korea;

    Samsung Electronics Company, Ltd., Hwaseong, South Korea;

    Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;

    School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;

    Mechatronics Research and Development Center, Samsung Electronics, Hwaseong, South Korea;

    Mechatronics Research and Development Center, Samsung Electronics, Hwaseong, South Korea;

    Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;

    School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Probes; Integrated circuits; Contacts; Micromechanical devices; Electrodes;

    机译:探头;集成电路;触点;微机械设备;电极;

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