A 40 Gb/s fully differential Transimpedance amplifier in 0.13 ??m SiGe BiCMOS technology

摘要

A new differential configuration Transimpedance Amplifier (TIA) with low-voltage and broadband characteristic has been implemented in 0.13 μm SiGe BiCMOS Technology. The cascode configuration has been adopted to reduce the voltage supply and the Miller capacitance of the input transistors. The TIA possesses 65.5 dBΩ differential transimpedance gain and 32 GHz measured bandwidth. The TIA circuit including the differential TIA, voltage amplifying stage, Operation Transconductance Amplifier (OTA) and Current Mode Logic (CML) output buffer consumes 117 mW power from a 2.5 V voltage supply. The chip size with the pads is only 484μm×486μm.