Pure Play GaN Foundry 0.25µm HEMT Technology for RF Applications

摘要

This paper presents the development of a newly available short gate length 0.25μm GaN HEMT technology and focuses on fabrication, process control, RF characterization and DC reliability. Our pure play Foundry services support discrete and RF applications with detailed specifications and wafer acceptance tests. The analysis of load-pull measurements of S- through X-band and DC reliability allow designers to create applications utilizing supply voltages up to 28V, with power density of 4W/mm, PAE of 45%, and large signal linear gain of 15dB at 10GHz based on continuous-wave on-wafer measurements without harmonic terminations. Improved power density of >5W/mm, PAE of 57.3% and linear gain of 20.1dB at S-band are measured under pulsed conditions using a 2.5μsec pulse at 1% duty cycle. Reliability performances focused on HTOL and HTRB are presented.