Base Resistance Scaling for Transistors of Various Geometries

摘要

Base resistance is an important parameter for bipolar transistor performance and modeling. It can be calculated from simple inputs: base sheet resistance, geometries, and contact metal characteristic impedance. Because a variety of device geometries are used, it is useful to develop scaling equations for different transistor geometries. In this work, we develop generalized equations for the base resistance of multi-finger rectangular devices, ring devices, and horseshoe devices.