Analysis and Modeling of Geometry Dependent Thermal Resistance in Silicon-on-lnsulator Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

It is demonstrated that the self-heating effect easily causes elevated thermal equilibrium condition within the active device for thin substrate MOSFETs. This leads to a non-linearity of the thermal resistance, which originally is a material specific constant. A compact model for describing the observed effective nonlinear thermal resistance has been developed which captures the device geometry effects as well as the bias condition dependences.