TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing

摘要

Thin film transistors have been fabricated on the polysilicon from the process of metal induced lateral crystallization and pulsed rapid thermal annealing. The result shows that process of 10 cycles of 1 second at 800/spl deg/C thermal pulse annealing has enhanced the grain sizes and the transistors fabricated have improvement which almost doubled the performance of those without the rapid thermal annealing. This method has high potential for use in the fabrication of thin film transistors on low temperature glass substrate and application in solar cell and LCD.