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首页> 外文期刊>Journal of Materials Science: Materials in Electronics >Investigating polysilicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell
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Investigating polysilicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell

机译:研究玻璃太阳能电池上薄膜晶体硅的快速热退火过程中的多晶硅薄膜结构变化

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摘要

Structural changes resulting from rapid thermal annealing were investigated in a thin film crystalline silicon on textured glass solar cell, in particular grain parameters and film modulus. Electron backscatter diffraction showed no significant change in grain dimensions post annealing and no preferred orientation. Columnar grains with large defect densities were visible in transmission electron microscopy with no qualitative change visible post annealing. A similar modulus obtained by nanoindenation, both pre and post annealing suggests no quantitative structural change. The film structure appears unchanged by rapid thermal annealing.
机译:研究了快速热退火导致的结构变化,这是在带纹理的玻璃太阳能电池上的薄膜晶体硅中进行的,特别是晶粒参数和膜模量。电子背散射衍射显示退火后晶粒尺寸没有显着变化,并且没有优选的取向。在透射电子显微镜中可见具有大缺陷密度的柱状晶粒,退火后无定性变化。通过退火之前和之后的纳米化获得的相似模量表明没有定量的结构变化。通过快速热退火,膜结构看起来没有变化。

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