Evaluation of Pulsed UV-Laser Gas Phase Doping for Fabrication of HighPerformance Polysilicon TFTs

摘要

The primary purpose of this research effort is to investigate and characterizethe use of Gas Immersion Laser Doping (GILD) for the fabrication of polysilicon TFTs. To achieve this goal we will be investigating the fabrication of poly-Si TFTs using both standard, industrially recognized doping and annealing processes in parallel with laser processing annealing. A TFT process flow was developed this quarter, and it has been applied to several experiments in which both conventional and laser processed NMOS TFTs were made. This process flow and the wafer splits that use it are briefly outlined in section II. Section III concludes by stating future efforts.