First multi-mode interference devices fabricated by metal-organicvapor phase diffusion enhanced selective area epitaxy

摘要

For the first time multi-mode interference (MMI) power splittershave been fabricated by selective area growth, using our novelmetal-organic vapor phase diffusion enhanced selective area epitaxy(MOVE2) process which features extremely wide-range in-planebandgap control and high design flexibility and therefore is verysuitable for photonic integration. Excess losses as low as 2 dB havebeen obtained for MMI power splitters with smooth and sufficiently flatwaveguide structures including S-bends