首页> 外文会议>Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International >Demonstration of an extendable and industrial 300mm BEOL integration for the 65-nm technology node
【24h】

Demonstration of an extendable and industrial 300mm BEOL integration for the 65-nm technology node

机译:演示用于65纳米技术节点的可扩展的工业300mm BEOL集成

获取原文

摘要

Given the much discussed challenges of interconnect scaling at the 65-nm node, the choice of process architecture is a key determinant of performance and extendibility. An alternate trench-first with hardmask integration is described in this work, including subsequent benefits. BEOL design rules are detailed for the 65-nm architecture, supporting both "low-k" and "ultra-low-k" backends, satisfying RC scaling requirements. Electrical parametric performance and yield are presented for a fully-integrated 300mm backend utilizing 65-nm design rules demonstrating the viability of this architecture for the 65-nm node and beyond.
机译:鉴于在65纳米节点上进行互连缩放所面临的广泛讨论的挑战,工艺体系结构的选择是性能和可扩展性的关键决定因素。在这项工作中介绍了具有硬掩模集成功能的替代的先沟槽式方法,包括随后的优点。 BEOL设计规则针对65纳米架构进行了详细说明,同时支持“ low-k”和“ ultra-low-k”后端,从而满足RC缩放要求。展示了采用65纳米设计规则的完全集成的300毫米后端的电参数性能和良率,证明了该架构在65纳米及以后节点中的可行性。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号