3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

摘要

The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their "equivalent gate number" and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the nonequilibrium Green's function formalism.