High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications

摘要

In-situ phosphorus doped silicon epitaxial film with 2.8 × 10~(21)cm~(-3)doping level is found to show high tensile stress comparable tocarbon doped silicon with 1.8% substitutional carbon. As-grownsamples show electrically activated dopant concentration of lessthan 2 × 10~(20) cm~(-3). The high tensile and low activation could bewell explained by formation of a pseudocubic Si_3P_4 structure insilicon lattice. Film resistivity of 0.29 mOhm-cm could be obtainedwith 0.25 ms annealing at 1200 °C, with slight reduction in tensilestrain. Also, 0.23 mOhm-cm could be obtained by millisecondanneal at 1300°C, but with 30% reduction in tensile strain.