Evolution of non-equilibrium intrinsic defects in indium phosphideduring the zinc diffusion from polymer spin-on films

摘要

To follow the evolution of non-equilibrium intrinsic defects(NID), particular emphasis has been placed on the poorly studied initialdiffusion stage (IDS) that corresponds to the time interval needed toincrease the temperature from room temperature to the diffusion one. Thegeneration and relaxation of NID can manifest themselves in a change ofmechanical properties of semiconductors as well as in an accumulation ofmore stable and extended defects such as dislocations and stackingfaults as well as S-pits. The comparison studies of distributionprofiles of defects and Zn atoms obtained after both IDS and the finaldiffusion stage (FDS) were carried out. Moreover, to evaluate the roleof NID in the Zn diffusion into InP, the Zn distribution profiles wereanalyzed in accordance with the calculation for GaAs performed in thecontext of the kick-out mechanism