首页> 中文期刊>西北大学学报(自然科学版) >脉冲激光诱导下ZnO纳米线阵列中非平衡载流子的扩散理论

脉冲激光诱导下ZnO纳米线阵列中非平衡载流子的扩散理论

     

摘要

为解决脉冲激光激发均匀半导体材料ZnO纳米线中所产生的非平衡载流子在一维情况下时间、空间的演化理论模型.采用级数展开法,求解非平衡载流子连续性方程,确定载流子随坐标和时间变化的解析解,并结合溶液法制备出的ZnO纳米线阵列,讨论在激发波长360纳米的激光激发下非平衡载流子浓度时空关系.所提出的级数展开求解法与经典的傅里叶方法,以及本征函数法得到的结果是一致的,并可用于确立脉冲激光诱导的非平衡载流子浓度扩散动力学.%In order to understand the process of non-equilibrium carriers induced by optical simulation,the diffusion and drift of this kind of carrier is discussed and theoretically analyzed for the ZnO nanowire semiconductor with 3.44ev of the band gap.The series expansion method is employed to illustrate the spatial and time dependence of the diffusion of the carriers in the 1-D homogeneous semiconductor.The ZnO nanowire array is successfully prepared through solution chemical synthesis,and is discussed with the theoretical solution for the distribution of the excess carrier under~360nm laser.It is found that the series expansion method,consistent with the Fourier method and eigenvalue equation,demonstrates that the diffusion as the function of space and time is successfully solved by our method.

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