Graphene-MoS2 Heterostructure Transistor

摘要

In order to simplify the preparation process of Graphene and molybdenum disulfide (MoS_2) heterostructuretransistors, a sessile drop method was proposed for sample preparation. In this paper, few-layers MoS_2 and monolayerGraphene liquid were prepared by liquid-phase exfoliation. Then the liquid was successively used to form a film on theSi substrate, which covered with 300nm SiO_2, by using spin-coater method. The Graphene/MoS_2 transistor wasprepared by electron beam evaporation with a metal mask plate. The K4200 semiconductor analyzer and probeplatform were used to characterize the transistor. We also see that Graphene/MoS_2 transistor is more sensitive to lightfrom same wavelength. This fully demonstrates that the Graphene/MoS_2 transistor combines the selective absorption oflight of MoS_2 and the characteristics of high carrier mobility of Graphene. And it greatly optimizes the performance ofMoS_2 transistor and Graphene transistor. Thus, Graphene/ MoS_2 transistors, which produced by sessile drop method,will have more potential application in the electric and optoelectronic industry.