Abstract: We describe the fabrication of the world's smallestfully functional conventional non-volatile memorydevice using 193 nm lithography for all levels. Thecell area of the smallest devices fabricated was 0.0896$mu@m$+2$/. The critical level of the device, to definethe channel length, was exposed with an alternatingaperture phase shift mask. Floating gate dimensionsranged from 0.080 to 0.14 $mu@m. Subsequentlithography, to define the control gate utilized abinary mask with gate dimensions down to 0.16 $mu@m. Amulti-layer ARC was used to reduce substratereflections and maintain linewidth control overtopography. All levels were exposed with a new singlelayer chemically amplified resist developed for 193 nmlithography. We will present results for line widthcontrol, etch bias, implementation of resolutionenhancement techniques as well as issues with processintegration. !8
展开▼
