Wide-bandgap-semiconductor wide-bandwidth wide-temperature-rangepower amplifiers

摘要

A wide-bandwidth and wide-temperature-range power amplifier hasbeen demonstrated by using a GaN/AlGaN-on-SiC HEMT. With a fixed biasand without any load tuning, the amplifier exhibits useful and uniformperformance across the band of 6 to 12 GHz and the temperature range of78 to 400 K. These results demonstrate the potential of wide-bandgapsemiconductors for robust power amplification. The potential forhigh-power, narrow-bandwidth, and regulated-temperature applications arealso discussed