A 180-GHz MMIC sub-harmonic mixer based on InGaAs/InAlAs/InP HEMTdiodes

摘要

A monolithic sub-harmonic mixer is designed for RF frequencies at180 GHz. It is fabricated on a 2-mil thick InP substrate using0.08-μm pseudomorphic InAlAs/InGaAs HEMT process. In-fixturemeasurements from 175 to 182 GHz with a sub-harmonic LO drive of 13 dBmat 96 GHz show a conversion loss of 15 dB. This is the firstdemonstration of a monolithic HEMT diode sub-harmonic mixer working inthe RF band of 180 GHz