We present a power electronics packaging technology utilizingchip-scale packaged (CSP) power devices to build three-dimensionalintegrated power electronics modules (IPEMs). The chip-scale packagingstructure, termed Die Dimensional Ball Grid Array (D2BGA),eliminates wise bonds by using stacked solder bumps to interconnectpower chips. D2BGA package consists of a power chip, innersolder bumps, high-lead solder balls, and molding resin. It has the samelateral dimensions as the starting power chip, which makes high-densitypackaging and module miniature possible. This package enables the powerchip to combine excellent thermal transfer, high current handlingcapability, improved electrical characteristics, and ultra-low profilepackaging. Electrical tests show that the VCE(sat) andon-resistance of the D2BGA high speed insulated-gate-bipolartransistors (IGBTs) are improved by 20% and 30% respectively byeliminating the device's wirebonds and other external interconnections,such as the leadframe. In this paper, we present the design,reliability, and processing issues of D2BGA package, and theimplementation of these chip-scale packaged power devices in building 30kW half-bridge power converter modules. The electrical and reliabilitytest results of the packaged devices and the power modules are reported
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机译:我们提出一种利用电力电子封装技术
芯片级封装(CSP)功率器件以构建三维
集成电力电子模块(IPEM)。芯片级封装
结构,称为模具尺寸球栅阵列(D 2 sup> BGA),
通过使用堆叠的焊料凸点进行互连,消除了明智的结合
电源芯片。 D 2 sup> BGA封装由电源芯片组成,内部
锡球,高铅锡球和成型树脂。它具有相同的
横向尺寸作为起始功率芯片,从而实现了高密度
封装和模块微型化。该封装使电源
芯片结合了出色的热传递,高电流处理能力
功能,改进的电气特性和超薄外形
包装。电气测试表明,V CE sub>(sat)和
D 2 sup> BGA高速绝缘栅双极型的导通电阻
晶体管(IGBT)分别提高了20%和30%
消除了设备的引线键合和其他外部互连,
例如引线框。在本文中,我们介绍了设计,
D 2 sup> BGA封装的可靠性和处理问题,以及
在30号楼中实施这些芯片级封装的功率器件
kW半桥功率转换器模块。电气和可靠性
报告封装设备和电源模块的测试结果
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