首页> 外文会议>Electronic Components amp; Technology Conference, 2000. 2000 Proceedings. 50th >Development of a wafer-level burn-in test socket for fine-pitch BGAinterconnect
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Development of a wafer-level burn-in test socket for fine-pitch BGAinterconnect

机译:开发用于微间距BGA的晶圆级老化测试插座相互联系

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Contact beam structures for fine pitch (0.5-mm) test socket thatwill mate with 95/5 lead/tin solder balls (50±5 μm indiameter) were fabricated by conventional integrated circuit processingtechnology. A range of dimensions for contact beam structure (cross andbridge) were tested for mechanical behavior and electrical performance.Non-linear finite element models (ANSYS 5.5) were used to predict theforce and stress between the copper thin film beam structure and thesolder ball. To avoid plastic deformation of the solder ball, numericalanalysis suggests that the contact force on 50 μm solder balls shouldbe lower than 17 mN. The yield strength of sputtered copper thin film (2μm) is inferred from experimental and numerical data to be in therange of 2.80-3.09 GPa. The best cross and bridge structures arepresented in addition to a new “Meander” structure which,numerically, shows the best potential
机译:接触梁结构,用于小间距(0.5毫米)测试插座 将与95/5铅/锡焊球(50±5μm 直径)是通过传统的集成电路工艺制造的 技术。接触梁结构的尺寸范围(横向和横向) 测试了机械性能和电气性能。 非线性有限元模型(ANSYS 5.5)用于预测 铜薄膜梁结构与薄膜之间的力和应力; 锡球。为避免焊球发生塑性变形,数值 分析表明,在50μm焊球上的接触力应 低于17 mN。溅射铜薄膜的屈服强度(2 μm)是根据实验和数值数据得出的 范围为2.80-3.09 GPa。最好的跨桥结构是 除了新的“ Meander”结构之外, 从数字上显示出最大的潜力

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