Radiation Hardness Testing of Super-Junction Power Mosfets by Heavy Ion Induced SEE Mapping

摘要

In this work direct heavy ion mapping of Single Event Effect (SEE) and Single Event Burnout (SEB) of super-junction power MOSFETs utilizing a high energy (55MeV) carbon micro-beam is presented. The resulting maps are sub-structurally resolved. Effect location, signal level and possible connections to cosmic radiation events are discussed.