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Failure analysis using LVP for tolerant design about BEOL parasitic effects in nanoscale technology

机译:利用LVP对纳米技术BEOL寄生效应进行耐受性设计的故障分析

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In nanoscale technology, parasitic effects by Backend of line (BEOL) according to feature sizes shrinkage have been reported as main issue of chip failure in VLSI designs. The timing defect failure and signal integrity problem such as crosstalk occur most frequently in deep submicron technologies. However, the root causes of timing defect and signal integrity problem are very difficult to diagnose in comparison with other stuck defects because they can be changed by external factors. This paper presents an efficient failure analysis method for initial yield ramp up and ongoing product with laser voltage probing (LVP) technology. We also describe several case studies on the failure analysis for design error improvement and yield enhancement. First, we identified the root cause of SCAN hold time failure at high voltage. In particular, several signal paths lead to unexpected timing defect failure such as crosstalk delay. Next, a crosstalk switch failure is defined as coupled interference from signal lines to a logically unrelated signal line. We analyzed failure of e-fuse data affected by BEOL crosstalk noise. The failure phenomenon is irregularly caused by test patterns, layout of signal line and applied voltage. In this paper, our FA results are contributed to providing guides for tolerant design about BEOL parasitic effects in nanoscale technology.
机译:在纳米级技术中,根据特征尺寸收缩的线路(BEOL)后端的寄生效应已被报告为VLSI设计中芯片故障的主要问题。时序缺陷失败和信号完整性问题如串扰最常发生在深度亚微米技术中。然而,与其他卡住缺陷相比,定时缺陷和信号完整性问题的根本原因非常难以诊断,因为它们可以通过外部因素改变。本文介绍了激光电压探测(LVP)技术的初始屈服斜坡上升和持续产品的有效故障分析方法。我们还描述了几种关于设计误差改进和产量增强的故障分析的案例研究。首先,我们确定了高电压下扫描保持时间故障的根本原因。特别地,若干信号路径导致意外的定时缺陷失败,例如串扰延迟。接下来,将串扰开关故障定义为从信号线到逻辑上不相关的信号线的耦合干扰。我们分析了受BEOL串扰噪声影响的电子保险丝数据的失败。故障现象是由测试模式,信号线布局和施加电压引起的不规则引起的。在本文中,我们的FA结果是为纳米级技术提供了关于BEOL寄生效应的耐受性设计的导向。

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