首页> 外文期刊>Microelectronics & Reliability >High robust and cost effective double node upset tolerant latch design for nanoscale CMOS technology
【24h】

High robust and cost effective double node upset tolerant latch design for nanoscale CMOS technology

机译:高稳固且成本效益的双节点心烦宽容锁设计纳米CMOS技术

获取原文
获取原文并翻译 | 示例
       

摘要

In this paper, we propose a novel high reliability and low cost DNU (Double Node Upset) tolerant latch, HRCE (High Robust and Cost Effective) latch, for nanoscale CMOS technology. In the presence of the interlocked feedback loop composed of C-elements and inverters, the proposed latch design can self-recover from the DNU. The proposed latch is evaluated and compared to previous soft error (SE) tolerant latches, and SPICE simulations are carried out with SMIC 65 nm technology model. Simulation results indicated that our proposed latch saves approximately 84.5% APDP (Area-Power-Delay Product) on average with the lowest APDP. Besides, we investigated the PVT (process, voltage and temperature) variations effects on the HRCE latch and other hardened latches, and the results indicated that the HRCE latch has less sensitivity towards process variation.
机译:在本文中,我们提出了一种适用于纳米级CMOS技术的新型高可靠性,低成本DNU(双节点翻转)容限锁存器HRCE(高鲁棒性和成本效益)锁存器。在存在由C元件和反相器组成的互锁反馈回路的情况下,所提出的锁存器设计可以从DNU中自动恢复。对所提出的锁存器进行评估,并将其与先前的软错误(SE)容错锁存器进行比较,并使用SMIC 65 nm技术模型进行SPICE仿真。仿真结果表明,我们提出的锁存器平均以最低的APDP节省约84.5%的APDP(面积-功率延迟乘积)。此外,我们研究了PVT(过程,电压和温度)变化对HRCE闩锁和其他硬化闩锁的影响,结果表明HRCE闩锁对过程变化的敏感性较低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号