Case study on asymmetric Id measured on MOSFET

摘要

With the development of technological process, many Front End Of Line (FEOL) defects are found, and many studies focus on abnormal Id behavior of MOSFETs on SRAM cells. But in this paper a method of how to analyze asymmetric Id measured on a single MOSFET to locate the FEOL defect based on real case analysis is introduced. With studies on cases with asymmetric Id, we have built the corresponding failure mechanism and summarized a decision tree in order to analyze that kind of cases. The decision tree and thinking method are also applied in other cases analysis and shown to be effective.