A comparative study of analog/RF performance: Symmetric and asymmetric underlap gate stack DG-MOSFETs

摘要

Underlap Double Gate MOSFET with Gate Stack architectures show better performance for its enhanced immunity to short channel effects. In this work, the Underlap Double Gate MOSFET with Gate Stack having symmetric and asymmetric source drain configurations have been compared for improved subthreshold analog performance in the 32nm gate length regime. Using the data obtained from 2D numerical simulator Sentaurus TCAD, the parameters such as the on current (Ids), the transconductance (gm), the gain per unit current (gm/Ids), the total gate capacitance (Cgg), the cut off frequency (fT) have been analyzed. Analysis suggested that the average on current, the transconductance, the cut off frequency and the total gate capacitance are increase by 56.86%, 46.73%, 3.5% and 28.25% respectively compared to the SymmetricUndelap Double Gate MOSFET.