Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission

摘要

Auger recombination, a process closely related to the device reliability, of a working 2 µm InGaSb/AlGaAsSb quantum well (QW) laser is first investigated via measuring its spontaneous emission. By extracting and analyzing the Z power parameter, severe Auger recombination at relatively low current density/carrier density of GaSb-based lasers has been experimentally revealed.