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Performance Comparison Between Three Measurement System of Scanning Microwave Microscopy

机译:三种扫描微波显微镜测量系统的性能比较

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This paper presents first trial of performance comparison between three measurement system of scanning microwave microscopy (SMM) based on atomic force microscopy (AFM). As an important point of comparison, three measurement systems must measure the same area (at least $15 mumathrm{m} imes 60 mumathrm{m}$) of same sample under the same measurement conditions at observation frequency around 16.5 GHz. In the study, multilayered silicon sample with several n-type dopant density for each layer was utilized. The benefit of Silicon multilayered sample is its flat topology on the surface. In the analysis, results have been corrected the effects of sample tilt and surface topology to electromagnetic characteristic observations from raw measurement results obtained by SMM. Finally, performance of SMM system has been compared in measured magnitude and phase measurands along with sample width. As the result, three system produces almost same performance for silicon multilayered sample.
机译:本文介绍了基于原子力显微镜(AFM)的三种扫描微波显微镜(SMM)测量系统之间的性能比较的第一项试验。作为重要的比较点,三个测量系统必须测量相同的区域(至少 $ 15 \ \ mu \ mathrm { m} \ times 60 \ \ mu \ mathrm {m} $ )在16.5 GHz左右的观测频率下,在相同测量条件下的相同样品。在研究中,利用了多层硅样品,每一层具有几种n型掺杂剂密度。硅多层样品的好处是其表面平坦的拓扑结构。在分析中,结果已从SMM获得的原始测量结果中纠正了样品倾斜度和表面拓扑对电磁特性观察的影响。最后,比较了SMM系统的性能,包括测量的幅度和相位测量值以及样本宽度。结果,三个系统对多层硅样品产生了几乎相同的性能。

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