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Progress in Traceable Nanoscale Capacitance Measurements Using Scanning Microwave Microscopy

机译:使用扫描微波显微镜进行可追踪纳米级电容测量的进展

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摘要

Reference samples are commonly used for the calibration and quantification of nanoscale electrical measurements of capacitances and dielectric constants in scanning microwave microscopy (SMM) and similar techniques. However, the traceability of these calibration samples is not established. In this work, we present a detailed investigation of most possible error sources that affect the uncertainty of capacitance measurements on the reference calibration samples. We establish a comprehensive uncertainty budget leading to a combined uncertainty of 3% in relative value (uncertainty given at one standard deviation) for capacitances ranging from 0.2 fF to 10 fF. This uncertainty level can be achieved even with the use of unshielded probes. We show that the weights of uncertainty sources vary with the values and dimensions of measured capacitances. Our work offers improvements on the classical calibration methods known in SMM and suggests possible new designs of reference standards for capacitance and dielectric traceable measurements. Experimental measurements are supported by numerical calculations of capacitances to reveal further paths for even higher improvements.
机译:参考样品通常用于校准和定量扫描微波显微镜(SMM)和类似技术中的电容和介电常数的纳米级电测量。然而,不建立这些校准样本的可追溯性。在这项工作中,我们对大多数可能的误差源进行了详细的调查,这些误差源影响了参考校准样本上的电容测量的不确定性。我们建立了全面的不确定性预算,导致相对值(在一个标准偏差给出的不确定性)的综合不确定性,用于从0.2 ff到10 ff的电容。即使使用非屏蔽探针,也可以实现这种不确定性水平。我们表明不确定性源的权重随测量电容的值和尺寸而变化。我们的工作提供了SMM中已知的经典校准方法的改进,并表明了用于电容和介电可追踪测量的参考标准的新设计。通过数值计算的电容计算支持实验测量,以揭示更高的改进的进一步路径。

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