Foundry-Enabled Ge Photodiode Arrays on Si on Insulator (SOI) with On-Chip Biasing Circuit

摘要

Ge-on-Si waveguide (WG) photodiodes (PDs) with an on-chip biasing circuit are reported. A single PD has a 52-GHz bandwidth (BW) while PD arrays composed of 2 and 4 PDs have radio frequency (RF) saturation powers of -6.7 dBm at 40 GHz and -2.3 dBm at 27 GHz, respectively.