Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing

摘要

The impact of annealing temperature and the duration on the dielectric properties of atomic-layer-deposited (ALD) 5 mol% Y-doped HfO2 capacitors have been examined. Besides the ferroelectric behavior of the capacitor over an annealing temperature of $500^{circ}mathrm{C}$ for short period, the appearance of ferroelectricity has been obtained at $400^{circ}mathrm{C}$ when annealed over 5 min. A fairly nice ferroelectric property with a remanent polarization Pr of 12 $mu$/cm² after wake-up process has been obtained.