首页> 外文会议>IEEE VLSI DEVICE CIRCUIT AND SYSTEM >Estimation of Power and Delay of CMOS Phase Detector and Phase-Frequency Detector Using Nano Dimensional MOS Transistor
【24h】

Estimation of Power and Delay of CMOS Phase Detector and Phase-Frequency Detector Using Nano Dimensional MOS Transistor

机译:利用纳米MOS晶体管估计CMOS鉴相器和相频检测器的功率和延迟

获取原文

摘要

In this paper the design of phase detector circuit using nano dimensional transistor has been presented .The conventional circuit of phase-frequency detection has been realized and presented. The circuit schematics are simulated with the help of Tanner SPICE software. The power dissipation, transistor delay, product of power and delay of the phase detector circuit has been estimated at 16 nm and 22 nm gate length of transistor. Power and speed performance analysis is carried out varying the value of VDD in the range 0.5 V - 1.2 V and aspect ratio of PMOS to NMOS from 1 to 5 . Moreover, the power, gate delay and PDP of the phase-frequency detector has been stated at 150 nm channel length .The results are pleasing context to the design of Very Large Scale Integrated (VLSI) circuit having high speed and low power dissipation.
机译:本文介绍了采用纳米晶体管的鉴相电路的设计。实现并提出了常规的鉴频电路。电路原理图借助Tanner SPICE软件进行仿真。已经估计了晶体管的栅极长度为16 nm和22 nm时的功率耗散,晶体管延迟,功率和相位检测器电路延迟的乘积。进行功率和速度性能分析,将VDD的值在0.5 V-1.2 V范围内变化,并将PMOS与NMOS的纵横比从1更改为5。此外,相频检测器的功率,栅极延迟和PDP已在150 nm的信道长度上给出。结果为设计具有高速和低功耗的超大规模集成(VLSI)电路提供了令人愉悦的环境。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号