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Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects

机译:氧化物缺陷中非绝热电荷跃迁的最小能量路径

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Charge transfer between oxide defects and device substrate can be described as a non-radiative multiphonon transition. Within this approach oxide defects are usually modelled as 1-dimensional harmonic oscillators. In the classical limit the charge transition dynamics are determined by the crossing point of the corresponding diabatic potential energy curves of the defects. In this work we go beyond the harmonic approximation and present a scheme to locate the minimum energy path between two differently charged defect configurations on multidimensional potential energy surfaces obtained with density functional theory. Using this more accurate method we quantify the accuracy of the harmonic approximation and demonstrate its applicability for common defects in amorphous silica. Furthermore, we compare the resulting transition barriers with experimental data and demonstrate excellent agreement for hydrogen-related defect species.
机译:氧化物缺陷与器件衬底之间的电荷转移可以描述为非辐射多声子跃迁。在这种方法中,通常将氧化物缺陷建模为一维谐波振荡器。在经典极限中,电荷跃迁动力学由缺陷的相应绝热势能曲线的交点确定。在这项工作中,我们超越了谐波近似,并提出了一种在密度函数理论获得的多维势能表面上的两个带不同电荷的缺陷配置之间定位最小能量路径的方案。使用这种更精确的方法,我们可以量化谐波近似的精度,并证明其适用于非晶态二氧化硅常见缺陷的适用性。此外,我们将所得的过渡壁垒与实验数据进行了比较,并证明了与氢有关的缺陷物质的优异一致性。

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