首页> 外国专利> RECYCLING CHARGE TO REDUCE ENERGY CONSUMPTION DURING MODE TRANSITION IN MULTITHRESHOLD COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORMTCMOS CIRCUITS

RECYCLING CHARGE TO REDUCE ENERGY CONSUMPTION DURING MODE TRANSITION IN MULTITHRESHOLD COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORMTCMOS CIRCUITS

机译:在多阈值互补金属氧化物-半金属纳米MTCMOS电路中,在模式转换期间回收利用电荷以减少能量消耗

摘要

In one embodiment, the circuit includes a first circuit block connected to ground via a first sleep transistor, a virtual ground node between the first circuit block and the first sleep transistor, via a second sleep transistor power and a second circuit block which is connected to, and a virtual supply node between the second circuit block and the second sleep transistor. Said circuit further transmission gate (TG), or to enable a charge play between the first circuit block and the second circuit block during the transition to the sleep mode from the active mode to connect the virtual ground node to the virtual supply node and a pass transistor.
机译:在一个实施例中,该电路包括经由第一睡眠晶体管接地的第一电路块,经由第二睡眠晶体管电源的第一电路块与第一睡眠晶体管之间的虚拟接地节点以及连接至第二电路块的第二电路块。以及第二电路块和第二睡眠晶体管之间的虚拟电源节点。所述电路进一步传输门(TG),或在从活动模式过渡到睡眠模式期间使第一电路块和第二电路块之间能够进行电荷播放,以将虚拟接地节点连接到虚拟供电节点并通过晶体管。

著录项

  • 公开/公告号KR100892915B1

    专利类型

  • 公开/公告日2009-04-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070053436

  • 申请日2007-05-31

  • 分类号G11C11/00;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:03

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