首页> 外国专利> Recycling charge to reduce energy consumption during mode transition in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits

Recycling charge to reduce energy consumption during mode transition in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits

机译:在多阈值互补金属氧化物半导体(MTCMOS)电路中,在模式转换期间回收电荷以减少能耗

摘要

In one embodiment, a circuit includes a first circuit block connected to ground via a first sleep transistor, a virtual ground node between the first circuit block and the first sleep transistor, a second circuit block connected to a supply via a second sleep transistor, and a virtual supply node between the second circuit block and the second sleep transistor. The circuit also includes a transmission gate (TG) or a pass transistor connecting the virtual ground node to the virtual supply node to enable charge recycling between the first circuit block and the second circuit block during transitions by the circuit between active mode and sleep mode.
机译:在一个实施例中,一种电路包括:第一电路块,其经由第一睡眠晶体管连接到地;第一电路块与第一睡眠晶体管之间的虚拟接地节点;第二电路块,其经由第二睡眠晶体管连接到电源;以及在第二电路块和第二睡眠晶体管之间的虚拟电源节点。该电路还包括将虚拟接地节点连接到虚拟电源节点的传输门(TG)或传输晶体管,以在活动模式和睡眠模式之间的电路转换期间,在第一电路块和第二电路块之间实现电荷循环。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号