Performance Analysis of Si-Channel Nanosheet FETs with Strained SiGe Source/Drain Stressors

摘要

Silicon channel Nanosheet Field Effect Transistors (NSFETs) are integrated with diamond-shaped embedded-Si_(1-x)Ge_x source/drain (S/D) stressors to boost the electrical performance. The effects of stressor geometry (shape and size) on device performance are studied in detail. The carrier mobility enhancement due to process-induced strain in NSFET is found to increase the drain current. Further, enhancement in other electrical parameters is also obtained by increasing the Ge mole fraction in Si_(1-x)Ge_x. The impact of higher Ge mole fraction in the S/D region resulted in an optimum Vth, SS, and DIBL values of 141.78 mV, 69.49 mV/dec, and 24.11 mV/V, respectively. The Efficiency of S/D stress transfer is found to be dependent on the Ge mole fraction in the source/drain stressors p-channel NSFETs.