High-Performance pMOSFETs with High Ge Fraction Strained SiGe-Heterostructure Channel and Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD

摘要

The improvement of current drivability and short-channel effect is very important for ultrasmall MOS device technology. SiGe-channel pMOSFETs are one of the most promising devices because hole mobility in the SiGe layers is enhanced. In the previous work, it has been reported that Super Self-aligned Shallow junction Electrode (S{sup}3E) MOSFETs formed by selective B-doped SiGe CVD are effective for the suppression of short-channel effect. In this paper, it is clarified that the (S{sup}3E) pMOSFETs with Si{sub}0.65Ge{sub}0.35 channel are realized not only with suppression of punch-through due to the ultrashallow B-diffused source/drain but also with enhancement of maximum linear transconductance due to the low parasitic resistance, compared to that with the Si channel fabricated by the same process conditions.