Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

摘要

In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO₂ interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO₂ interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E' centers, can be greatly reduced utilizing nitric oxide and barium annealing. E' centers have been directly linked to bias temperature instabilities in 4H-SiC technology.