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Process to optimize performance and reliability of MOSFET devices
Process to optimize performance and reliability of MOSFET devices
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机译:优化MOSFET器件性能和可靠性的过程
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摘要
A process for fabricating MOSFET devices, in which performance, as well as reliability enhancements, are included, has been developed. An LDD process, using first an ion implanted phosphorous step, to address hot carrier lifetime phenomena, followed by a arsenic ion implantation step, used to improve device performance, is described.
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