Defect Assessment in AlN Nucleation Layers Grown on Silicon and Silicon-on-Insulator Substrates

摘要

Traps in AlN nucleation layers on bulk silicon and Silicon-on-Insulator (SOI) substrates have been studied by Capacitance-Voltage and low-frequency gate current noise measurements. Both methods indicate a lower trap density for the layers on SOI, suggesting a better quality AlN layer from a viewpoint of electrically active defects.