A Study of Inductor and its Model in SiGe BICMOS Process

摘要

The SiGe BiCMOS RF process is a high-end analog process platform. The modeling of RF devices is one of the most important aspects of the RF process platform because the accuracy of RF device modeling directly determines the yield of RF IC chips and development costs. In RF communication circuits, inductors are widely used in voltage-controlled oscillators, low-noise amplifiers, passive filters, impedance matching networks, etc. The performance, especially the influence of inductance quality factors, of inductors has a great impact on the reliability of these RF circuits and the efficiency of circuit design. In the RFICs of the silicon process, the substrate loss is extremely large due to the low substrate resistivity. Therefore, the research of high-Q on-chip inductors has become a hot spot in the development of RFIC. In this paper, the inductance loss mechanism in the silicon germanium process platform was studied, a high-performance multilayer inductor was developed and a complete inductor model was established.