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QUANTIFICATION OF UNDERFILL INFLUENCE TO CHIP PACKAGING INTERACTIONS OF WLCSP

机译:灌装对WLCSP芯片包装相互作用的影响的量化

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Wafer Level Chip Scale Package (WLCSP) has been a favorable packaging solution for compact portable consumer electronics. The microelectronics industry introduced Extra Low K (ELK) to enhance electric performances with the cost of diminishing mechanical reliability. The ELK itself and its interfaces are highly fragile and susceptible to fracture. ELK cracking under bumps and ELK inter layer delamination (ILD) from die corners are often observed during and after solder reflow and qualification process such as accelerated thermal cycling (ATC). In this study, the underfill selection and its fillet formation influence to the Chip Packaging Interactions(CPI) of WLCSP was investigated through an experimental technique and numerical analysis. For the experimental assessment, thermo-mechanical interactions between die corner and underfill was investigated. Digital image correlation (DIC) technique with optical microscope was utilized to quantify the deformation behavior and strains of cross-sectioned WLCSP die corner subjected to thermal loading from 25°C to 125°C. The results clearly show captured deformations of die corner area under thermal loading. For the fillet formation influence, it shows that the high underfill fillet configuration gives higher normal strain at the die corner area during thermal cycling. For the underfill selection, it clearly shows that the strain difference at corner solder during thermal cycling caused by two different type of underfill material. Finally, finite element analysis(FEA) was conducted by simulating the thermal loading applied in the experiments and validated with experimental results. Then, using the FEA analysis, parametric study for underfill material properties and fillet height were performed on the ELK reliability of WLCSP. Energy release rate of the die corner crack were obtained and used as damage indicators for die corner ELK delamination.
机译:晶圆级芯片规模封装(WLCSP)已成为紧凑型便携式消费类电子产品的理想封装解决方案。微电子工业引入了超低K(ELK),以降低机械可靠性为代价来增强电性能。 ELK本身及其界面非常脆弱,容易断裂。在焊料回流和鉴定过程(如加速热循环(ATC))过程中和之后,经常会观察到凸点下的ELK开裂和ELK从模具角处的层间分层(ILD)。通过实验技术和数值分析,研究了底部填充剂的选择及其填角的形成对WLCSP芯片封装相互作用的影响。为了进行实验评估,研究了模具角和底部填充材料之间的热机械相互作用。利用光学显微镜的数字图像相关技术(DIC)量化了承受25°C至125°C热载荷的WLCSP冲模横截面的变形行为和应变。结果清楚地显示了在热负荷下模具角部区域的捕获变形。对于圆角形成的影响,它表明,高底部填充圆角构型在热循环过程中在模角区域提供了较高的法向应变。对于底部填充的选择,它清楚地表明,热循环过程中角焊料处的应变差异是由两种不同类型的底部填充材料引起的。最后,通过模拟实验中的热负荷进行了有限元分析(FEA),并得到了实验结果的验证。然后,使用FEA分析,对WLCSP的ELK可靠性进行了底部填充材料特性和圆角高度的参数研究。获得了模具角部裂纹的能量释放率,并将其用作模具角部ELK分层的损伤指标。

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