Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications

摘要

We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.