A study of single event effects induced by heavy charged particles in 180 nm SoI technology

摘要

This article presents a measurement of the SEU bit-flip cross section of the X-CHIP-03 ASIC manufactured in a 180 nm PDSoI technology. The measurements were performed using a shift register in the X-CHIP-03 ASIC made with custom D flip-flops. The bit-flip cross sections and ASIC power consumption measurements were performed while irradiating the device with Ne, Ar and Xe ions, provided by the U400M isochronous cyclotron at the FLNR laboratory at JINR.